Impurity doped UV protection layer

Details Impurity doped UV protection layer Impurity doped UV protection layer

2005-01-20

2010-06-08

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S639000, C257S640000, C257S649000, C257SE23019, C257SE23116, C257SE23132

Reexamination Certificate

active

07732923

ABSTRACT:
An ultra-violet (UV) protection layer is formed over a semiconductor workpiece before depositing a UV curable dielectric layer. The UV protection layer prevents UV light from reaching and damaging underlying material layers and electrical devices. The UV protection layer comprises a layer of silicon doped with an impurity, wherein the impurity comprises O, C, H, N, or combinations thereof. The UV protection layer may comprise SiOC:H, SiON, SiN, SiCO:H, combinations thereof, or multiple layers thereof, as examples.

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