Improving etch resistance of a casein-based photoresist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430 23, 430313, 430318, 430331, G03C 500

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active

042307945

ABSTRACT:
The etch resistance of a casein-based photoresist pattern to low specific gravity ferric chloride based etchant solutions is increased by treating the photoresist pattern with a formaldehyde solution containing at least 10 percent formaldehyde by volume by a period of at least 30 seconds, and thereafter drying the photoresist pattern.

REFERENCES:
patent: 3186847 (1965-06-01), Willems et al.
patent: 3186848 (1965-06-01), Willems et al.
patent: 4061529 (1977-12-01), Goldman et al.

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