Implementation of a metal barrier in an integrated...

Details Implementation of a metal barrier in an integrated... Implementation of a metal barrier in an integrated...

2007-10-12

2009-10-13

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S645000

Reexamination Certificate

active

07601636

ABSTRACT:
A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.

REFERENCES:
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patent: 6962873 (2005-11-01), Park
patent: 2002/0074664 (2002-06-01), Nogami et al.
Noda, et al., “Selective Silicidation of Co Using Silane or Disilane for Anti-Oxidation Barrier Layer in Cu Metallication,” Japanese Journal of Applied Physics, vol. 43, No. 9A, Sep. 2004, pp. 6001-6007; XP002432923.
Preliminary French Search Report and Written Opinion, FR 06 09038, dated May 10, 2007.

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