Implanting carbon to form P-type drain extensions

Details Implanting carbon to form P-type drain extensions Implanting carbon to form P-type drain extensions

2006-03-21

2006-03-21

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07015108

ABSTRACT:
The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

REFERENCES:
patent: 6303450 (2001-10-01), Park et al.
patent: 6436783 (2002-08-01), Ono et al.
patent: 6830980 (2004-12-01), Mansoori et al.
patent: 2001/0025994 (2001-10-01), Yoshino et al.
patent: 2003/0207542 (2003-11-01), Chidambaram et al.
SiGeC: , IHP SiGe:C; 1 page; www.ihp-ffo.de/SiGeC/SiGe1r.htm; Jan. 22, 2004.

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