Implanted vertical source-line under straight stack for...

Details Implanted vertical source-line under straight stack for... Implanted vertical source-line under straight stack for...

2011-03-15

2011-03-15

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S262000, C438S528000

Reexamination Certificate

active

07906394

ABSTRACT:
In FLASH EPROM cells, source diffusion continuity between horizontal and vertical source lines is provided by an arsenic implant under the stack in vertical source lines.

REFERENCES:
patent: 5659500 (1997-08-01), Mehrad
patent: 5858839 (1999-01-01), Kaya et al.
patent: 6043122 (2000-03-01), Liu et al.
patent: 6072212 (2000-06-01), Kaya et al.
patent: 6243293 (2001-06-01), Van Houdt et al.
patent: 6312989 (2001-11-01), Hsieh et al.

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