Implanted hidden interconnections in a semiconductor device...

Details Implanted hidden interconnections in a semiconductor device... Implanted hidden interconnections in a semiconductor device...

2007-01-23

2007-01-23

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S514000, C438S598000

Reexamination Certificate

active

10132523

ABSTRACT:
A camouflaged interconnection for interconnecting two spaced-apart regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first region forming a conducting channel between the two spaced-apart regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second region of opposite conductivity to type, the second region being disposed between the two spaced-apart regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.

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