Implantation using a hardmask

Details Implantation using a hardmask Implantation using a hardmask

2011-08-23

2011-08-23

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S527000, C257SE21632

Reexamination Certificate

active

08003455

ABSTRACT:
A method for processing CMOS wells, and performing multiple ion implantations with the use of a single hard mask is disclosed. The method includes forming and patterning a hardmask over a substrate, whereby the hardmask attains a first opening. The substrate may be a semiconductor substrate. The method further includes performing a first ion implantation, during which, outside the first opening the hardmask is essentially preventing ions from reaching the substrate. The method further involves the application of a photoresist in such a manner that the photoresist is covering the hardmask, and it is also filling up the first opening. This is followed by using the photoresist to pattern the hardmask, whereby the hardmask attains a second opening. The method further includes performing a second ion implantation, during which, outside the second opening, the hardmask and the photoresist, which fills the first opening, are essentially preventing ions from reaching the substrate. The two ion implantations may be used to form the two type of CMOS wells.

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