Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-10-21
2010-06-15
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S643000, C438S687000, C257SE21584
Reexamination Certificate
active
07737013
ABSTRACT:
A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.
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Papasouliotis George D.
Singh Vikram
Yin Heyun
Pham Thanhha
Varian Semiconductor Equipment Associates Inc.
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