Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-10-10
2006-10-10
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S197000, C438S510000, C438S528000, C438S542000, C438S558000, C438S585000
Reexamination Certificate
active
07118997
ABSTRACT:
A method for implanting gate regions essentially without implanting regions of the semiconductor layer where source/drain regions will be later formed. The method includes the steps of (a) providing (i) a semiconductor layer, (ii) a gate dielectric layer on the semiconductor layer, (iii) a gate region on the gate dielectric layer, wherein the gate region is electrically insulated from the semiconductor layer by the gate dielectric layer; (b) forming a resist layer on the gate dielectric layer and the gate region; (c) removing a cap portion of the resist layer essentially directly above the gate region essentially without removing the remainder of the resist layer; and (d) implanting the gate region essentially without implanting the semiconductor layer.
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III. Charles W.
Au Bac H.
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
Wilczewski Mary
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