Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C257S192000
Reexamination Certificate
active
07994051
ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer.
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Chinese Patent Office, Office Action mailed Nov. 9, 2010, Application No. 200910134815.8, 5 pages.
Hou Yong-Tian
Huang Chien-Hao
Hung Cheng-Lung
Ku Keh-Chiang
Haynes and Boone LLP
Stark Jarrett J
Taiwan Semiconductor Manufacturing Company , Ltd.
Tobergte Nicholas
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