Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2007-08-07
2007-08-07
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S373000, C438S302000, C438S369000, C438S370000, C438S506000, C438S514000, C438S519000
Reexamination Certificate
active
11006257
ABSTRACT:
The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate (410) on an implant platen (405) such that a predominant axes (430) of the substrate (410) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (405), and further wherein the substrate (410) is not tilted. The method further includes implanting ions into the substrate (410), the rotated position of the predominant axes (430) reducing shadowing.
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Bernstein James D.
Ghneim Said
Mahalingam Nandu
Moser Benjamin
Robertson Lance S.
Brady III W. James
Le Thao P.
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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