Implant damage removal by laser thermal annealing

Details Implant damage removal by laser thermal annealing Implant damage removal by laser thermal annealing

2005-03-29

2005-03-29

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S558000, C438S661000, C438S662000, C438S914000

Reexamination Certificate

active

06872643

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a layer over a substrate, and doping the layer with a dopant, after which the layer is laser thermal annealed. The layer can be a nitride, an oxide, or a polysilicon layer. The dopants can be arsenic, phosphorous, boron, or nitrogen. During the laser thermal annealing, certain portions of a surface of the semiconductor device are laser thermal annealed and other portions of a surface of the semiconductor device are not exposed. Also, the surface of the layer is smoother after the laser thermal annealing.

REFERENCES:
patent: 6403420 (2002-06-01), Yang et al.
patent: 6500713 (2002-12-01), Ramsbey et al.

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