Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-24
2011-05-24
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S408000, C257SE27112
Reexamination Certificate
active
07947546
ABSTRACT:
Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing.
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Holt Judson Robert
Liu Jin Ping
Chartered Semiconductor Manufacturing Ltd.
Horizon IP Pte Ltd
International Business Machines Corporation (IBM)
Kraig William F
Le Thao X
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