Immersion lithography process, and structure used for the...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S273100, C430S327000

Reexamination Certificate

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11112105

ABSTRACT:
An immersion lithography process is described. First, a photoresist layer on a material layer is formed. Then, an acid compensation layer is formed on the photoresist layer. An immersion exposure step is performed on the acid compensation layer and the photoresist layer. The acid compensation layer contains a photo-acid generator with a concentration of the photo-acid higher than that produced by a photo-acid generator in the photoresist layer after the immersion exposure step. Then, a development step is performed to pattern the acid compensation layer and the photoresist layer.

REFERENCES:
patent: 2001/0053486 (2001-12-01), Matsunuma
patent: 2005/0123863 (2005-06-01), Chang et al.
patent: 2005/0202347 (2005-09-01), Houlihan et al.
patent: 2005/0250898 (2005-11-01), Maeda et al.

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