Imaging with gate controlled charge storage

Details Imaging with gate controlled charge storage Imaging with gate controlled charge storage

2006-05-19

2009-12-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S293000, C257S258000, C257S215000, C257S387000

Reexamination Certificate

active

07638825

ABSTRACT:
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.

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