Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-01-23
2011-11-08
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S293000, C257S432000, C257SE27001
Reexamination Certificate
active
08053821
ABSTRACT:
An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.
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patent: 6573578 (2003-06-01), Kimura et al.
patent: 2005/0077588 (2005-04-01), Kasuga
patent: 2006-054252 (2006-02-01), None
Korean Patent Application No. 1019980061146 to Jung et al., having Publication date of Jul. 15, 2000 (w/ English Abstract page).
Korean Patent Application No. 1020010052646 to Takeshi et al., having Publication date of Jun. 19, 2002 (w/ English Abstract page).
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Ahn Jung-Chak
Choi Sung-Ho
Lee Kang-Sun
Lim Moo-Sup
Moon Kyoung-Sik
Choi Monica H
Samsung Electronics Co,. Ltd.
Tran Tan N
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