Image sensor having improved sensitivity and method of...

Details Image sensor having improved sensitivity and method of... Image sensor having improved sensitivity and method of...

2007-06-18

2009-10-06

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S293000, C257S432000, C257S444000, C257SE27132, C257SE27133

Reexamination Certificate

active

07598552

ABSTRACT:
In an image sensor in which a vertical length from a photoelectric conversion element to an uppermost micro-lens is minimal, and a method of manufacturing the same, the image sensor includes a substrate, a plurality of photoelectric conversion elements, and first to n-level (where n is an integer greater than or equal to 2) metal wires. In the substrate, a sensor region and a peripheral circuit region are defined. The plurality of photoelectric conversion elements are formed in or on the substrate within the sensor region. The first to n-level metal wires are sequentially formed on the substrate. The n-level metal wires within the sensor region are of a thickness that is less than the n-level metal wires within the peripheral circuit region.

REFERENCES:
patent: 2001/0030703 (2001-10-01), Inoue
patent: 2006/0157760 (2006-07-01), Hayashi et al.
patent: 2006/0163451 (2006-07-01), Park et al.
patent: 2007/0194356 (2007-08-01), Moon et al.
patent: 6-120471 (1994-04-01), None
patent: 200150846 (2000-05-01), None
patent: 2003-282851 (2003-10-01), None
patent: 2005-294749 (2005-10-01), None
patent: 1020060086029 (2006-07-01), None

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