Image sensor circuits including shared floating diffusion...

Details Image sensor circuits including shared floating diffusion... Image sensor circuits including shared floating diffusion...

2011-03-22

2011-03-22

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE31097, C348S294000

Reexamination Certificate

active

07910965

ABSTRACT:
An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

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