Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-17
2007-04-17
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C250S208100
Reexamination Certificate
active
10906510
ABSTRACT:
A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping polarity; (c) a surface pinning layer on and in direct physical contact with the charge collection well, the surface pinning layer comprising a semiconductor material doped with a second doping polarity opposite to the first doping polarity; and (d) an electrically conducting push electrode being in direct physical contact with the surface pinning layer but not being in direct physical contact with the charge collection well.
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Adkisson James W.
Ellis-Monaghan John J.
Gambino Jeffrey P.
Jaffe Mark D.
Rassel Richard J.
Canale Anthony J.
Huynh Andy
International Business Machines - Corporation
Nguyen Tram Hoang
Schmeiser Olsen & Watts
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