Image sensor and method for forming the same

Details Image sensor and method for forming the same Image sensor and method for forming the same

2010-01-22

2011-11-29

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S029000, C438S237000, C438S373000, C438S369000, C257S292000, C257SE25032

Reexamination Certificate

active

08067301

ABSTRACT:
A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.

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