Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2008-10-02

2011-12-13

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S070000, C438S222000, C438S514000, C257SE21043, C257SE21092, C257SE21127, C257SE21352, C257SE21366, C257SE21588, C257SE27133

Reexamination Certificate

active

08076197

ABSTRACT:
A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

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patent: 6943051 (2005-09-01), Augusto et al.
patent: 7141836 (2006-11-01), Adkisson et al.
patent: 7449712 (2008-11-01), Cha
patent: 7491561 (2009-02-01), Adkisson et al.
patent: 2006/0157806 (2006-07-01), Rhodes

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