Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-10-31
2006-10-31
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S103000, C257SE33003
Reexamination Certificate
active
07129514
ABSTRACT:
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
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patent: 6320209 (2001-11-01), Hata et al.
patent: 6924500 (2005-08-01), Okuyama et al.
patent: 09129974 (1997-05-01), None
patent: 10312971 (1998-11-01), None
Tachibana et al., “Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature,” May 29, 2000, Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214.
Biwa Goshi
Doi Masato
Kikutani Tomoyuki
Okuyama Hiroyuki
Oohata Toyoharu
Bell Boyd & Lloyd LLC
Dolan Jennifer M
Jr. Carl Whitehead
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