Image detection apparatus and methods

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE27133, C250S208100

Reexamination Certificate

active

08063422

ABSTRACT:
MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.

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