Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2007-10-30
2007-10-30
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257SE25029
Reexamination Certificate
active
10813176
ABSTRACT:
A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while forming a plurality of projections on a crystal growth interface at the initial or intermediate stage of crystal growth; conducting the crystal growth until recesses between the projections are buried, so that the crystal growth interface becomes flat; and continuing the crystal growth to a thickness of 10 μm or more while keeping the crystal growth interface flat.
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Dolan Jennifer M.
Hitachi Cable Ltd.
Jr. Carl Whitehead
Sughrue Mion Pllc.
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