III-V group nitride system semiconductor substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound

Reexamination Certificate

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C257SE21098, C257S613000

Reexamination Certificate

active

10928482

ABSTRACT:
A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.

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Yuichi Oshima, et al., “Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation”, Japanese Journal Applied Physics, vol. 42, Part 2, No. 1A/B, Jan. 15, 2003, pp. L1-L3.
Kensaku Motoki, et al., “Preparation of Large Freestanding GaN Substrate by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate”, Japanese Journal Applied Physics, vol. 40, Part 2, No. 2B, Feb. 15, 2001, pp. L140-L143.

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