III-V compound semiconductor

Details III-V compound semiconductor III-V compound semiconductor

2005-01-18

2005-01-18

Baumeister, Bradley (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C428S698000

Reexamination Certificate

active

06844574

ABSTRACT:
Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InuGavAlwN (where 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦x≦1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.

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