III-nitride light emitting devices fabricated by substrate...

Details III-nitride light emitting devices fabricated by substrate... III-nitride light emitting devices fabricated by substrate...

2006-01-10

2009-02-17

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S455000

Reexamination Certificate

active

07491565

ABSTRACT:
Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

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