Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
Inventor
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III-nitride light emitting devices fabricated by substrate...
III-nitride light emitting devices fabricated by substrate...
Light emitting devices having wafer bonded aluminum gallium...
Methods for fabricating light emitting devices having...
Thickness tailoring of wafer bonded AlxGayInzN structures by...
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