Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-12-22
2010-02-16
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S101000, C257S089000, C257S012000, C257S013000, C257SE33005, C257SE33043, C257SE33074, C257SE33025
Reexamination Certificate
active
07663148
ABSTRACT:
In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.
REFERENCES:
patent: 5779924 (1998-07-01), Krames et al.
patent: 6046465 (2000-04-01), Wang et al.
patent: 6091085 (2000-07-01), Lester
patent: 6274924 (2001-08-01), Carey et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6861305 (2005-03-01), Koike et al.
patent: 7071494 (2006-07-01), Steigerwald et al.
patent: 7335908 (2008-02-01), Samuelson et al.
patent: 7384809 (2008-06-01), Donofrio
patent: 2002/0014629 (2002-02-01), Shibata et al.
patent: 2002/0117677 (2002-08-01), Okuyama et al.
patent: 2003/0092230 (2003-05-01), Koike et al.
patent: 2003/0162340 (2003-08-01), Tezen
patent: 2003/0235229 (2003-12-01), Deng et al.
patent: 2004/0091010 (2004-05-01), Choquette et al.
patent: 2004/0113163 (2004-06-01), Steigerwald et al.
patent: 2004/0240834 (2004-12-01), Katoh et al.
patent: 2005/0082543 (2005-04-01), Alizadeh et al.
patent: 2005/0156189 (2005-07-01), Deguchi et al.
patent: 2005/0199888 (2005-09-01), Seong et al.
patent: 2005/0224790 (2005-10-01), Jin et al.
patent: 2005/0242364 (2005-11-01), Moustakas et al.
patent: 2006/0027815 (2006-02-01), Wierer et al.
patent: 2006/0038190 (2006-02-01), Park et al.
patent: 2006/0223211 (2006-10-01), Mishra et al.
patent: 2007/0202624 (2007-08-01), Yoon et al.
patent: 2007/0295981 (2007-12-01), Erchak et al.
patent: 2008/0149946 (2008-06-01), Kim et al.
patent: 1641051 (2006-03-01), None
patent: 2006-352148 (2006-12-01), None
patent: 2006060599 (2006-06-01), None
patent: 2006068377 (2006-06-01), None
patent: 2006/134568 (2006-12-01), None
Jonathan J. Wierer Jr. et al, “Grown Photonic Crystals In Semiconductor Light Emitting Devices,” U.S. Appl. No. 11/156,105, filed Jun. 17, 2005, 24 pages.
Akihiko Kiruychi et al., “InGaN/GaN Multiple Quantum Disk Nanocolunnn Light-Emitting Diodes Grown on (III) Si Substrate,” Japanese Journal of Applied Physics, vol. 43, No. 12A, 2004, pp. L1524-1526.
K. Pakula et al., “Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment,” Journal of Crystal Growth, available online at www.sciencedirect.com, pp. 1-7.
Hwa-Mok Kim et al., “High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays,” 2004 American Chemical Society, Nano Lett., vol. 4, No. 6, 10 pages.
International Search Report and Written Opinion, 12 pages.
David Aurelien J. F.
Gardner Nathan F.
Krames Michael R.
Romano Linda T.
Yi Sungsoo
Patent Law Group
Philips Lumileds Lighting Company LLC
Williams Alexander O
LandOfFree
III-nitride light emitting device with reduced strain light... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with III-nitride light emitting device with reduced strain light..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride light emitting device with reduced strain light... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4222374