4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With particular semiconductor material

Keiichiro Asai

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Apparatus for fabricating a III-V nitride film and a method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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Apparatus for fabricating a III-V nitride film and a method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Epitaxial growth substrate and a method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Epitaxial growth substrate and a method for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Epitaxial substrates and semiconductor devices

Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2502511

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