Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2011-08-16
2011-08-16
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S500000, C257SE29089
Reexamination Certificate
active
07998847
ABSTRACT:
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the <0001> directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
REFERENCES:
patent: 5868837 (1999-02-01), DiSalvo et al.
patent: 7732236 (2010-06-01), Nakahata et al.
patent: 2009/0267190 (2009-10-01), Fujiwara et al.
patent: H10-312971 (1998-11-01), None
patent: 2003-183100 (2003-07-01), None
patent: 2004-221480 (2004-08-01), None
patent: 2005-225681 (2005-08-01), None
Masanori Morishita et al. , “The Influences of Supersaturation on LPE Growth of GaN Single Crystals Using the Na Flux Method,” Journal of Crystal Growth, Oct. 2004, pp. 402-408, vol. 270, Elsevier, NY.
Hirota Ryu
Kawase Tomohiro
Uematsu Koji
Ghyka Alexander G
Judge James W.
Sumitomo Electric Industries Ltd.
LandOfFree
III-nitride crystal manufacturing method, III-nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with III-nitride crystal manufacturing method, III-nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride crystal manufacturing method, III-nitride... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2760223