III-nitride bidirectional switch

Details III-nitride bidirectional switch III-nitride bidirectional switch

2005-02-11

2008-12-16

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S192000, C257S194000, C257S200000, C257S201000

Reexamination Certificate

active

07465997

ABSTRACT:
A III-nitride bidirectional switch which includes an AlGaN/GaN interface that obtains a high current currying channel. The bidirectional switch operates with at least one gate that prevents or permits the establishment of a two dimensional electron gas to form the current carrying channel for the bidirectional switch.

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Taiwanese Office Action dated Sep. 5, 2007 in the corresponding Taiwanese Patent Application.

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