IGFET method of forming with silicide contact on ultra-thin gate

Details IGFET method of forming with silicide contact on ultra-thin gate IGFET method of forming with silicide contact on ultra-thin gate

1997-04-21

1998-12-22

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, 438663, 438682, H01L 21336, H01L 214763, H01L 213205

Patent

active

058518916

ABSTRACT:
An IGFET with a silicide contact on an ultra-thin gate is disclosed. A method of forming the IGFET includes forming a gate over a semiconductor substrate, forming a source and a drain in the substrate, depositing a contact material over the gate, and reacting the contact material with the gate to form a silicide contact on the gate and consume at least one-half of the gate. By consuming such a large amount of the gate, a relatively thin gate can be converted into an ultra-thin gate with a thickness on the order of 100 to 200 angstroms. Preferably, the bottom surface of the gate is essentially undoped before reacting the contact material with the gate, and reacting the contact material with the gate pushes a peak concentration of a dopant in the gate towards the substrate so that a heavy concentration of the dopant is pushed to the bottom surface of the gate without being pushed into the substrate. As exemplary materials, the contact material is a refractory metal such as titanium, the gate is polysilicon, and the dopant is arsenic.

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