IC mechanical planarization process incorporating two slurry com

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566551, 1566561, 216 89, 216 95, H01L 2100, B24B 100

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active

055408109

ABSTRACT:
The present invention relates to integrated circuits (ICs) fabrication. Particularly, there is a cmp process which incorporates small quantities of two chemicals. The first chemical is the standard slurry mixtures, like water, aluminum-oxide and hydrogen-peroxide mixed into a slurry. The second chemical is a strong base chemical, like KOH, or potassium hydroxide. Moreover, the cmp process utilizes a system of closely regulating the timing of the two chemical process. Specifically, during a first time period, both chemicals are applied; thus increasing speed of the chemical removal of tungsten material. During a second time period, the KOH is removed, thus slowing down the chemical action and importantly achieving a greater degree of planerization than is capable by the two chemical first time period.

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William J. Patrick, "Application of Chemical Mechanical Polishing to the Fabrication", J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, pp. 1778-1784.

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