Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Thanhha (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S737000, C257S761000, C257S766000
Reexamination Certificate
active
06995475
ABSTRACT:
A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.
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Biggs Julie C.
Cheng Tien-Jen
Eichstadt David E.
Fanti Lisa A.
Griffith Jonathan H.
Hogg William N.
International Business Machines - Corporation
Pham Thanhha
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