Hydrogenation of polysilicon thin film transistors

Details Hydrogenation of polysilicon thin film transistors Hydrogenation of polysilicon thin film transistors

1997-09-05

2000-05-02

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438475, H01L 21336

Patent

active

060571829

ABSTRACT:
A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

REFERENCES:
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5250444 (1993-10-01), Khan et al.
patent: 5401685 (1995-03-01), Ha
patent: 5470763 (1995-11-01), Hamada
patent: 5534445 (1996-07-01), Tran et al.
patent: 5541119 (1996-07-01), Kodama
patent: 5674759 (1997-10-01), Jung
patent: 5686335 (1997-11-01), Wuu et al.
patent: 5693961 (1997-12-01), Hamada
patent: 5719076 (1998-02-01), Guha
patent: 5744202 (1998-04-01), Nickel
patent: 5759745 (1998-06-01), Hollingsworth

Affiliated with

Also associated with

Rating

Hydrogenation of polysilicon thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hydrogenation of polysilicon thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hydrogenation of polysilicon thin film transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1593190