Thin film transistor and method for fabricating same

Details Thin film transistor and method for fabricating same Thin film transistor and method for fabricating same

1999-01-06

2000-05-02

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438683, H01L 21336

Patent

active

060571810

ABSTRACT:
A method for fabricating a thin film transistor having a substrate includes the steps of forming a gate electrode on the substrate and forming a gate insulating layer on the gate electrode and the substrate. Source and drain electrodes are formed having side surfaces facing each other on the gate insulating layer. An active layer is formed over the source and drain electrodes and the gate insulating layer. A silicide layer is formed on at least one of the side surfaces of the source and drain electrodes.

REFERENCES:
patent: 5658807 (1997-08-01), Manning
patent: 5719078 (1998-02-01), Kim
patent: 5989944 (1999-11-01), Yoon
patent: 5998229 (1999-12-01), Lyu et al.

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