Hydrogen plasma downstream treatment equipment and hydrogen plas

Details Hydrogen plasma downstream treatment equipment and hydrogen plas Hydrogen plasma downstream treatment equipment and hydrogen plas

1998-03-13

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

H01L 21324, H01L 21477, H01L 2126, H01L 2142

Patent

active

06107215&

ABSTRACT:
A hydrogen plasma downstream treatment equipment comprises a first gas supply source for supplying a hydrogen gas, a second gas supply source for supplying a nitrogen fluoride gas, and a tube-like chamber used for surface treatment of a semiconductor layer by use of the hydrogen gas and the nitrogen fluoride gas. The chamber includes a plasma generator for activating the hydrogen gas and the nitrogen fluoride gas by introducing the nitrogen fluoride gas in which a flow rate ratio of the hydrogen gas and the nitrogen fluoride gas is in excess of 4, a processor placed in a downstream of the plasma generator to place the semiconductor layer therein, and gas flow controlling means for controlling the first gas supply source and the second gas supply source so as to set a flow rate of the nitrogen fluoride gas four times a flow rate of the hydrogen gas.

REFERENCES:
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5620559 (1997-04-01), Kikuchi et al.
patent: 5919336 (1999-07-01), Kikuchi et al.
T. Kusuki et al., Abstract No. 255, Electrochem. Soc., pp. 375 and 376, 1993.
H. Nishino et al., 1989 Dry Process Symposium; pp. 90-93.
Jun Kikuchi et al., Jpn. J. Appl. Phys. vol. 33, Part 1, No. 4B, pp. 2207-2211, 1994.

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