Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-03-13
1982-11-30
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156657, 1566591, 156662, 204192E, 427 38, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
043614612
ABSTRACT:
Atomic hydrogen, typically produced in a plasma, etches a wide range of materials, including III-V materials and their oxides. GaAs oxide is etched at a faster rate than GaAs, for example, providing significant possibilities for processing integrated circuits and other devices. Silicon is etched preferentially as compared to silicon dioxide or silicon nitride. Native oxides are also conveniently removed by this method prior to other processing steps.
REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 4094732 (1978-06-01), Reinberg
patent: 4227975 (1980-10-01), Hartman et al.
patent: 4266986 (1981-05-01), Benton et al.
patent: 4284689 (1981-08-01), Craighead et al.
patent: 4285762 (1981-08-01), Moustakas
patent: 4285763 (1981-08-01), Coldren
Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide by W. Kern, RCA Review, vol. 39, pp. 278-294, 1978.
Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF.sub.4 -H.sub.2 by L. M. Ephrath, Journal of the Electrochemical Society, pp. 1419-1421, Aug. 1979.
Reactivity of Solid Silicon with Hydrogen Under Conditions of a Low Pressure Plasma by A. P. Webb et al., Chemical Physics Letters, vol. 62, pp. 173-177, 1979.
In Situ Thermogravimetry-A Tool for Quantitative Study of Plasma-Surface Interaction, by S. Veprek et al., Conference Proceedings, 4th International Symposium on Plasma Chemistry, pp. 79-89, 1979, Published by University of Zurich, Switzerland.
Comprehensive Inorganic Chemistry, Pergamon Press, 1973, at Table 19, p. 74, Physical Properties of Covalent Hydrides.
Plasma-Assisted Etching Techniques for Pattern Delineation, by C. M. Melliar-Smith et al., Thin Film Processes, J. L. Vossen and W. Kern, Editors, Academic Press, NY, 1978, pp. 526-529.
A Model for the Dissociation of Hydrogen in an Electric Discharge by A. T. Bell, Industrial and Engineering Chemistry Fundamentals, vol. 11, pp. 209-215, 1972.
Dissociation and Ionization of Hydrogen in High Frequency Discharges, by C. C. Goodyear et al., Proceedings of the Physical Society, vol. 79, pp. 732-740, 1962.
Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and its Compounds, by J. W. Coburn et al., IBM Journal of Research and Development, vol. 23, pp. 33-41, 1979.
Bell Telephone Laboratories Incorporated
Fox James H.
Powell William A.
Wilde Peter V. D.
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