Hydrogen barrier layer and method for fabricating...

Details Hydrogen barrier layer and method for fabricating... Hydrogen barrier layer and method for fabricating...

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000

Reexamination Certificate

active

06900095

ABSTRACT:
The present invention provides a hydrogen barrier layer able to prevent diffusions of hydrogen into a capacitor and a method for fabricating a semiconductor device having the same. The inventive method includes the steps of: forming a capacitor on an upper portion of a substrate providing a transistor; forming a first hydrogen barrier layer covering the capacitor, the first hydrogen barrier layer containing Al and Ti; forming a metal line connecting the capacitor to the transistor; forming a second hydrogen barrier layer containing Al and Ti on the metal line; and forming a protection layer on the second hydrogen barrier layer.

REFERENCES:
patent: 6352898 (2002-03-01), Yang et al.
patent: 6365927 (2002-04-01), Cuchiaro et al.
patent: 6395612 (2002-05-01), Amanuma
patent: 6630702 (2003-10-01), Zhang et al.
patent: 6642100 (2003-11-01), Yang et al.
patent: 2002-110931 (2002-04-01), None
patent: 990062231 (2001-07-01), None

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