Hydrogen anneal for curing defects of silicon/nitride interfaces

Details Hydrogen anneal for curing defects of silicon/nitride interfaces Hydrogen anneal for curing defects of silicon/nitride interfaces

1998-09-14

2000-03-14

Fahmy, Wael

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438791, 438785, 438239, 438240, 438381, 438387, 438393, 427 79, H01L 2120, H01L 2131, H01L 21469, H01L 218242, B05D 512

Patent

active

060372354

ABSTRACT:
A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

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patent: 5550091 (1996-08-01), Fukuda et al.
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5716875 (1998-02-01), Jones, Jr. et al.
Wolf, S. and Tauber, R.N.; Silicon Processing for the VLSI Era; vol. 1; Lattice Press; Sunset Beach, Ca.;p. 194, No Month, 1986.

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