Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-09-02
2000-08-15
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438602, H01L 2128, H01L 213202
Patent
active
061036145
ABSTRACT:
The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100% H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100% hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
REFERENCES:
patent: 4732821 (1988-03-01), Hauser et al.
patent: 4892843 (1990-01-01), Schmitz et al.
patent: 5520753 (1996-05-01), Hunter
patent: 5668301 (1997-09-01), Hunter
D. Ahmari et al., "PdGe on GaAs: a study of the applicibility in InGaP/GaAs HbT fabrication", Proceedings of 1997 International Symposium on Compound Semiconductors (no minth given).
D. Ahmari et al., "Effects of alloy ambient on PdGe contacts on n-type GaAs", Applied Physics Letters, vol. 72, No. 26, pp. 3479-3481, Jun. 1998.
D.A. Ahmari, M.L. Hattendorf, D.F. Lemmerhirt, Q. Yang, Q.J. Hartmann, G.E. Stillman, Abstract entitled "PdGe on GaAs: A Study of the Applicability in InGaPIGaAs HBT Fabrication", abstract booklet for the 1997 International Symposium on Compound Semiconductors, published Sep. 8, 1997.
D.A. Ahmari, M.L. Hattendorf, D.F. Lemmerhirt, Q.Yang, Q.J. Hartmann, G.E. Stillman, "PdGe on GaAs: A Study of the Applicability in InGaP/GaAs HBT Fabrication", published in the proceedings subsequent to the 1997 International Symposium on Compound Semiconductors, Sep. 8, 1997.
Yung-Hui Yeh, Jiun-Tsuen Lai, Joseph Ya-Min Lee, "Low Contact-Resistance and Shallow Pd/Ge Ohmic Contacts to n-In.sub.0.53 Ga.sub.0.47 As on InP Substrate Formed by Rapid Thermal Annealing", Jpn. J. Appl. Phys, vol. 35 (1996) Pt. 2, No. 12A, pp. 1569-1571.
Jiun-Tsuen Lai, Joseph Ya-Min Lee, "Pd/Ge Ohmic Contacts to n-Type GaAs Formed by Rapid Thermal Annealing", Appl. Phys. Lett., vol. 64, No. 1, Jan. 10, 1994, pp. 229-231.
E.D. Marshall, B. Zhang, L.C. Wang, P.F. Jiao, W.X. Chen, T. Sawada, S.S. Lau, "Nonalloyed Ohmic Contacts to n-GaAs by Solid-Phase Epitaxy of Ge", J. Appl. Phys., vol. 62, No. 3, Aug. 1, 1987, pp. 942-947.
Jiun Tsuen Lai, Joseph Ya-Min Lee, "Redistribution of Constituent Elements in Pd/Ge Contacts to n-Type GaAs Using Rapid Thermal Annealing", J. Appl. Phys., vol. 76, No. 3, Aug. 1, 1994, pp. 1686-1690.
W.Y. Han, Y. Lu, H.S. Lee, M.W. Cole, L.M. Casas, A. DeAnni, K.A. Jones, L.W. Yang, "Shallow Ohmic Contact to Both n-and p-GaAs", J. Appl. Phys., vol. 74, No. 1, Jul. 1, 1993, pp. 754-756.
L.C. Wang, X.Z. Wang, S.N. Hsu, S.S. Lau, P.S.D. Lin, T. Sands, S.A. Schwartz, D.L. Plumton, T.F. Keuch, "An Investigation of the Pd-In-Ge Nonspiking Ohmic Contact to n-GaAs Using Transmission Line Measurement, Kelvin, and Cox and Strack Structures", J. Appl. Phys., vol. 69, No. 8, Apr. 15, 1991, pp. 4364-4372.
D. B. Slater, Jr., P. M. Enquist, J.A. Hutchby, A.S. Morris, R.J. Trew, "Low Emitter Resistance GaAs Based HBT's Without InGaAs Caps", IEEE Electron Device Letters, vol. 15, No. 5, May 1994.
I.-H. Kim, S.H. Park, T.-W. Lee, M.P. Park, B.R. Ryum, K.E. Pyun, H.-M. Park, "Pd/Ge-Based Ohmic Contacts to n-GaAs and n-GaAs for Heterojunction Bipolar Transistors", presented at ISCS conference, Sep. 8-11, 1997.
E.D. Marshall, L.S. Yu, S.S. Lau, T.F. Kuech, K.L. Kavanagh, "Planar Ge/Pd and Alloyed Au-Ge-Ni Ohmic Contacts to n-Al.sub.x Ga.sub.1-x As (0<x<0.3)",Applied Physics Letters, vol. 54, No. 8, 1989, pp. 72-73.
S. Umemura, K. Yasuda, T. Aoki, "Contact Resistance Characteristics of Noble Metal Alloys for Connector Contacts", IEEE Trans. Compon. Hybrids Manuf. Technol., vol. 14, No. 1, Mar. 1991, pp. 181-186.
S. Asmontas, A. Suziedelis, "Small Area Contacts of Different Metals with p-type Germanium", Semiconductors, vol. 30, No. 7, Jul. 1996, pp. 614-617.
J. Brown, J. Ramer, K. Zheng, L.F. Lester, S.D. Hersee, J. Zolper, "Ohmic Contacts to Si-Implanted and Un-Implanted n-type GaN", Materials Research Society Symposium Proceedings, vol. 395, presented at the First International Symposium on Gallium Nitride and Related Materials, Boston, MA, Nov. 27-Dec. 1, 1995, pp. 855-860.
K.A. Jones, M. Dubey, W.Y. Han, M.W. Cole, D.W. Eckart, "Novel Ohmic Contacts to III-V Semiconductors", Proceedings of the Twenty-Fourth State-Of-The-Art Program on Compound Semiconductors, Los Angeles, CA, May 5-10, 1996, pp. 181-185.
Yi-Tae Kim, John-Lam Lee, Jae Kyoung Mun, Haecheon Kim, "Pd/Ge/Ti/Au Ohmic Contact to AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor with an Undoped Cap Layer", Appl. Phys. Lett, vol. 71, No. 18, Nov. 3, 1997, pp. 2656-2658.
F. Edelman, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, W. Beyer, "Reduction of SnO.sub.2 BY a-Si.sub.1-x Ge.sub.x ", Materials Research Society Symposium Proceedings, vol. 337, presented at Advanced Metallization for Devices and Circuits--Science, Technology and Manufacturability Symposium, San Francisco, CA, Apr. 1994, pp. 589-594.
R.C. Hughes, P.A. Taylor, A.J. Ricco, R.R. Rye, "Kinetics of Hydrogen Adsorption and Absorption: Catalytic Gate MIS Gas Sensors on Silicon", J. Electrochem. Soc., vol. 136, No. 9, Sep. 1989, pp. 2653-2661.
A. Dutta, S. Basu, "Modified Metal-Insulator-Metal (M-I-M) Hydrogen Gas Sensors Based on Zinc Oxide", J. Mater. Sci., Mater. Electron., vol. 6, No. 6, dec. 1995, pp. 415-418.
G. Morrison, "After 40 Years SiGe's Time Has Finally Come", Electronic News, vol. 44, No. 2205, Feb. 9, 1998.
D.A. Ahmari, M.L. Hattendorf, D.F. Lemmerhirt, Q. Yang, Q.J. Hartmann, J.E. Baker and G.E. Stillman, "Effects of Alloy Ambient on PdGe Contacts on n-Type GaAs", Applied Physics Letters, vol. 72, No. 26, Jun. 29, 1998, pp. 3479-3481.
Ahmari David A.
Hattendorf Michael L.
Lemmerhirt David F.
Stillman Gregory E.
Christianson Keith
Niebling John F.
The Board of Trustees of the University of Illinois
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