Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-03
2009-02-03
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S198000, C438S199000
Reexamination Certificate
active
07485506
ABSTRACT:
A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.
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Doris Bruce B.
Ieong Meikei
Nowak Edward J.
Yang Min
International Business Machines - Corporation
Menz Laura M
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
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