Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-06
2007-11-06
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000
Reexamination Certificate
active
10872605
ABSTRACT:
A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.
REFERENCES:
patent: 6204098 (2001-03-01), Anceau
patent: 6870226 (2005-03-01), Maeda et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2006/0049460 (2006-03-01), Chen et al.
Doris Bruce B.
Ieong Meikei
Nowak Edward J.
Yang Min
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
Vu Hung
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