Hybrid SOI-bulk semiconductor transistors

Details Hybrid SOI-bulk semiconductor transistors Hybrid SOI-bulk semiconductor transistors

2007-10-11

2008-11-18

Ngo, Ngan (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S300000, C438S301000, C257SE21433

Reexamination Certificate

active

07452761

ABSTRACT:
Channel depth in a field effect transistor is limited by an intra-layer structure including a discontinuous film or layer formed within a layer or substrate of semiconductor material. Channel depth can thus be controlled much in the manner of SOI or UT-SOI technology but with less expensive substrates and greater flexibility of channel depth control while avoiding floating body effects characteristic of SOI technology. The profile or cross-sectional shape of the discontinuous film may be controlled to an ogee or staircase shape to improve short channel effects and reduce source/drain and extension resistance without increase of capacitance. Materials for the discontinuous film may also be chosen to impose stress on the transistor channel from within the substrate or layer and provide increased levels of such stress to increase carrier mobility. Carrier mobility may be increased in combination with other meritorious effects.

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