Hybrid schottky injection field effect transistor

Details Hybrid schottky injection field effect transistor Hybrid schottky injection field effect transistor

1996-03-29

1998-08-18

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257155, 257162, 257170, 257347, H01L 2974

Patent

active

057961263

ABSTRACT:
A hybrid schottky injection field effect transistor is provided. A first diffusion region of a second conductivity type and a second diffusion region of a first conductivity type are separately formed at a main surface of a silicon layer. A third diffusion region of a first conductivity type is formed within the first diffusion region. An insulating layer covers part of the second diffusion region and the third diffusion region. A gate electrode is formed on the insulating layer and is situated over the first and third diffusion regions and the silicon layer. A cathode electrode is commonly connected to the third diffusion region and the first diffusion region. An anode electrode comprises a trench filled with electrode material and is formed in the silicon layer along side of the second diffusion area and a gate insulating layer.

REFERENCES:
patent: Re33209 (1990-05-01), Plummer
Han-Soo Kim, Jae-Hyung Kim, Byeong-Hoon Lee, Min-Koo Han, Seung Youp Han, Yearn-Ik Choi, Sang-Koo Chung, "The Modified HSINFET Using the Trenched JBS Injector", International Power Semiconductor Device & ICs Symposium, 24 May 1995.

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