Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-06
1999-03-02
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257528, H01L 2701
Patent
active
058775331
ABSTRACT:
A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.
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Arai Michio
Nagano Katsuto
Sakamoto Naoya
Yamauchi Yukio
Chaudhuri Olik
Ferguson Jr. Gerald J.
Kelley Nathan K.
Semiconductor Energy Laboratory Co,. Ltd.
TDK Corporation
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