Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Patent
1999-05-26
2000-10-24
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
257678, 257693, 257703, 257705, 257783, H01L 2348, H01L 2352, H01L 2940
Patent
active
061371742
ABSTRACT:
A package for multiple IC chip module. The IC chip is attached to electric wires on ceramic substrate which has good heat dissipating capability. The bonding pads along the periphery of the ceramic substrate are lead-bonded to a second substrate with printed wiring on at least one side of the surfaces and ball grid array at the bottom surface. Double-sided printed wiring can be used to provide multiple-layered interconnection. The IC chip is separated from the second substrate by a resin to cushion the stress due to difference in thermal expansion coefficients of the IC chip and the second substrate.
REFERENCES:
patent: 5744863 (1998-04-01), Culnane et al.
patent: 5777386 (1998-07-01), Higashi et al.
patent: 5796170 (1998-08-01), Marcantonio
patent: 5909058 (1999-06-01), Yano et al.
patent: 5939783 (1999-08-01), Laine et al.
patent: 5952719 (1999-09-01), Robinson et al.
patent: 5953213 (1999-09-01), Napierala
Chen Wen-Hwa
Chiang Kuo-Ning
Tseng Kuo-Tai
ChipMOS Technologies Inc.
Clark Jhihan B
Saadat Mahshid
LandOfFree
Hybrid ASIC/memory module package does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hybrid ASIC/memory module package, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid ASIC/memory module package will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1966794