Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-22
2011-02-22
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27072, C438S170000
Reexamination Certificate
active
07893490
ABSTRACT:
A high-voltage metal-oxide-semiconductor (HVMOS) device and methods for forming the same are provided. The HVMOS device includes a substrate; a first high-voltage n-well (HVNW) region buried in the substrate; a p-type buried layer (PBL) horizontally adjoining the first HVNW region; a second HVNW region on the first HVNW region; a high-voltage p-well (HVPW) region over the PBL; an insulating region at a top surface of the second HVNW region; a gate dielectric extending from over the HVPW region to over the second HVNW region, wherein the gate dielectric has a portion over the insulating region; and a gate electrode on the gate dielectric.
REFERENCES:
patent: 5227654 (1993-07-01), Momose et al.
patent: 5889315 (1999-03-01), Farrenkopf et al.
patent: 6770951 (2004-08-01), Huang et al.
Chen Fu-Hsin
Huang Yu-Hui
Li Ting-Pang
Gordon Matthew
Le Thao X
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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