HTO offset and BL trench process for memory device to...

Details HTO offset and BL trench process for memory device to... HTO offset and BL trench process for memory device to...

2011-05-03

2011-05-03

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S265000, C438S287000, C257SE29309, C257SE21423

Reexamination Certificate

active

07935596

ABSTRACT:
Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains a charge trapping dielectric stack, a poly gate, a pair of pocket implant regions, and a pair of bit lines. The bit line can be formed by an implant process at a higher energy level and/or a higher concentration of dopants without suffering device short channel roll off issues because spacers at bit line sidewalls constrain the implant in narrower implant regions.

REFERENCES:
patent: 6979856 (2005-12-01), Nishizaka et al.
patent: 7183606 (2007-02-01), Wang et al.
patent: 7553717 (2009-06-01), Chakravarthi et al.
patent: 7573095 (2009-08-01), Lee et al.
patent: 2007/0269948 (2007-11-01), Manger
patent: 2008/0128791 (2008-06-01), Lee et al.
patent: 2008/0265306 (2008-10-01), Van Schaijk et al.
patent: 2008/0277699 (2008-11-01), Chakravarthi et al.
patent: 2009/0039405 (2009-02-01), Cheng et al.
patent: 2009/0047757 (2009-02-01), Tsujiuchi et al.
patent: 2010/0264480 (2010-10-01), Cheng et al.

Affiliated with

Also associated with

Rating

HTO offset and BL trench process for memory device to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HTO offset and BL trench process for memory device to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HTO offset and BL trench process for memory device to... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2647624